Part Details for FDD4685 by Fairchild Semiconductor Corporation
Overview of FDD4685 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD4685
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | MOSFET P-CH 40V 8.4A DPAK | 105263 |
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$0.9420 / $1.4130 | Buy Now |
Part Details for FDD4685
FDD4685 CAD Models
FDD4685 Part Data Attributes:
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FDD4685
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDD4685
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | DPAK, TO-252, 2 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 121 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 8.4 A | |
Drain-source On Resistance-Max | 0.042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 205 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 81 ns | |
Turn-on Time-Max (ton) | 43 ns |
Alternate Parts for FDD4685
This table gives cross-reference parts and alternative options found for FDD4685. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD4685, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDD4685 | 8.4A, 40V, 0.042ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | Rochester Electronics LLC | FDD4685 vs FDD4685 |
FDD4685_F085 | -40V, -8.4A, 27mΩ, DPAK P-Channel PowerTrench®, TO-252 3L (DPAK), 30000-TAPE REEL | onsemi | FDD4685 vs FDD4685_F085 |
FDD4685_F085 | Power Field-Effect Transistor, 32A I(D), 40V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | FDD4685 vs FDD4685_F085 |