There are no models available for this part yet.
Overview of FDD3N50NZTM by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for FDD3N50NZTM by Fairchild Semiconductor Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 380 |
|
RFQ | ||||
| Quest Components | 304 |
|
$0.6666 / $1.6665 | Buy Now | |||
| ComSIT USA | 500 V, 2.5 A, 2.5 OHM N-CHANNEL UNIFET II MOSFET Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant |
|
|
RFQ |
CAD Models for FDD3N50NZTM by Fairchild Semiconductor Corporation
Part Data Attributes for FDD3N50NZTM by Fairchild Semiconductor Corporation
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|---|---|
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Pbfree Code
|
Yes
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Rohs Code
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Yes
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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FAIRCHILD SEMICONDUCTOR CORP
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Part Package Code
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DPAK
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Package Description
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ROHS COMPLIANT, DPAK-3
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Pin Count
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3
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Manufacturer Package Code
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TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
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Reach Compliance Code
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not_compliant
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Avalanche Energy Rating (Eas)
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114 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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500 V
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Drain Current-Max (ID)
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2.5 A
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Drain-source On Resistance-Max
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2.5 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-252
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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40 W
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Pulsed Drain Current-Max (IDM)
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10 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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30
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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