Part Details for FDD16AN08A0-F085 by onsemi
Overview of FDD16AN08A0-F085 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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UPD78F0856MAA-FAA-G | Renesas Electronics Corporation | 8-bit Microcontrollers (Non Promotion), , / |
Price & Stock for FDD16AN08A0-F085
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDD16AN08A0-F085
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Avnet Americas | Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD16AN08A0-F085) RoHS: Compliant Min Qty: 509 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 9693 Partner Stock |
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$0.6095 / $0.7274 | Buy Now |
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Rochester Electronics | FDD16AN08A0 - N-Channel UltraFET Trench MOSFET, 75V, 50A RoHS: Compliant Status: Obsolete Min Qty: 1 | Call for Availability |
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$0.6093 / $0.7168 | Buy Now |
Part Details for FDD16AN08A0-F085
FDD16AN08A0-F085 CAD Models
FDD16AN08A0-F085 Part Data Attributes
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FDD16AN08A0-F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FDD16AN08A0-F085
onsemi
N-Channel UltraFET® Trench MOSFET, 75V, 50A, 13mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Part Package Code | TO-252 3L (DPAK) | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 95 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 135 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |