Part Details for FDD14AN06LA0 by Fairchild Semiconductor Corporation
Results Overview of FDD14AN06LA0 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDD14AN06LA0 Information
FDD14AN06LA0 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDD14AN06LA0
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 46 |
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Quest Components | 9.5 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 36 |
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$1.6750 / $2.6800 | Buy Now |
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Rochester Electronics | 9.5A, 60V, 0.015ohm, N-Channel Power MOSFET, TO-252AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 56735 |
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$1.9000 / $2.2400 | Buy Now |
Part Details for FDD14AN06LA0
FDD14AN06LA0 CAD Models
FDD14AN06LA0 Part Data Attributes
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FDD14AN06LA0
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDD14AN06LA0
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.5A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252AA | |
| Package Description | TO-252AA, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 55 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 9.5 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD14AN06LA0
This table gives cross-reference parts and alternative options found for FDD14AN06LA0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD14AN06LA0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | FDD14AN06LA0 vs IPB80N06S2LH5ATMA1 |
| IXFH68N20 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | FDD14AN06LA0 vs IXFH68N20 |
| STW10NK80Z | STMicroelectronics | $2.0575 | N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package | FDD14AN06LA0 vs STW10NK80Z |
| IXFK60N55Q2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | FDD14AN06LA0 vs IXFK60N55Q2 |
| STW20NK70Z | STMicroelectronics | Check for Price | 20A, 700V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | FDD14AN06LA0 vs STW20NK70Z |
| IRLSZ34 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDD14AN06LA0 vs IRLSZ34 |
| IPP45N06S4-09 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 45A I(D), 60V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | FDD14AN06LA0 vs IPP45N06S4-09 |
| 2SK2464 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 45A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN | FDD14AN06LA0 vs 2SK2464 |
| SPP04N60C2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | FDD14AN06LA0 vs SPP04N60C2 |
| SSH7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.3A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | FDD14AN06LA0 vs SSH7N60B |