Part Details for FDD13AN06A0_F085 by Fairchild Semiconductor Corporation
Overview of FDD13AN06A0_F085 by Fairchild Semiconductor Corporation
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Part Details for FDD13AN06A0_F085
FDD13AN06A0_F085 CAD Models
FDD13AN06A0_F085 Part Data Attributes:
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FDD13AN06A0_F085
Fairchild Semiconductor Corporation
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FDD13AN06A0_F085
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.9A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 56 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 9.9 A | |
Drain-source On Resistance-Max | 0.0135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 115 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |