Datasheets
FDD120AN15A0 by:

Power Field-Effect Transistor, 14A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN

Part Details for FDD120AN15A0 by Fairchild Semiconductor Corporation

Overview of FDD120AN15A0 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Medical Imaging

Price & Stock for FDD120AN15A0

Part # Distributor Description Stock Price Buy
Bristol Electronics   991
RFQ
Bristol Electronics   Min Qty: 6 175
  • 6 $0.9375
  • 23 $0.6094
  • 84 $0.3516
$0.3516 / $0.9375 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 150V, 0.12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA 792
  • 1 $1.1975
  • 85 $0.5988
  • 335 $0.4790
$0.4790 / $1.1975 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 150V, 0.12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA 140
  • 1 $1.2500
  • 21 $0.6250
  • 97 $0.3750
$0.3750 / $1.2500 Buy Now
Win Source Electronics MOSFET N-CH 150V 14A DPAK 35000
  • 80 $0.6489
  • 165 $0.6071
  • 260 $0.5862
  • 370 $0.5443
  • 480 $0.5234
  • 600 $0.5024
$0.5024 / $0.6489 Buy Now

Part Details for FDD120AN15A0

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FDD120AN15A0 Part Data Attributes

FDD120AN15A0 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDD120AN15A0 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 14A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description TO-252AA, 3 PIN
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 122 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD120AN15A0

This table gives cross-reference parts and alternative options found for FDD120AN15A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD120AN15A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD120AN15A0 N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ, DPAK-3 / TO-252-3, 2500-REEL onsemi FDD120AN15A0 vs FDD120AN15A0
Part Number Description Manufacturer Compare
FDD120AN15A0 N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ, DPAK-3 / TO-252-3, 2500-REEL onsemi FDD120AN15A0 vs FDD120AN15A0
HUF75829D3S 18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation FDD120AN15A0 vs HUF75829D3S
HUF75829D3S Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD120AN15A0 vs HUF75829D3S

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