Datasheets
FDC6561AN by:

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

Part Details for FDC6561AN by Fairchild Semiconductor Corporation

Overview of FDC6561AN by Fairchild Semiconductor Corporation

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Price & Stock for FDC6561AN

Part # Distributor Description Stock Price Buy
Bristol Electronics   3372
RFQ
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 200
  • 1 $0.6920
  • 37 $0.4152
  • 146 $0.3460
$0.3460 / $0.6920 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 15
  • 1 $1.2060
  • 5 $0.9648
$0.9648 / $1.2060 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 978
  • 1 $2.5200
  • 516 $1.0395
  • 963 $0.9450
$0.9450 / $2.5200 Buy Now
Chip 1 Exchange INSTOCK 400
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 11
  • 1 $2.3100
  • 100 $1.7300
  • 1,000 $1.5000
$1.5000 / $2.3100 Buy Now
Win Source Electronics MOSFET 2N-CH 30V 2.5A SSOT6 479655
  • 180 $0.2830
  • 435 $0.2320
  • 670 $0.2250
  • 920 $0.2180
  • 1,185 $0.2110
  • 1,590 $0.1890
$0.1890 / $0.2830 Buy Now

Part Details for FDC6561AN

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FDC6561AN Part Data Attributes:

FDC6561AN Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDC6561AN Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description SUPERSOT-6
Pin Count 6
Manufacturer Package Code 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.96 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC6561AN

This table gives cross-reference parts and alternative options found for FDC6561AN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6561AN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC6561AN_NL Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6561AN vs FDC6561AN_NL
FDC6561AN Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ, 3000-REEL onsemi FDC6561AN vs FDC6561AN
FDC6561AN 2500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC FDC6561AN vs FDC6561AN
Part Number Description Manufacturer Compare
SI3948DV Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6561AN vs SI3948DV
FDC6561AN_NL Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6561AN vs FDC6561AN_NL
SI3948DVD87Z Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6561AN vs SI3948DVD87Z
SI3948DVD84Z Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6561AN vs SI3948DVD84Z
SI3948DV-T1-E3 Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies FDC6561AN vs SI3948DV-T1-E3
FDC6561AN Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ, 3000-REEL onsemi FDC6561AN vs FDC6561AN
SI3948DVL99Z Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC6561AN vs SI3948DVL99Z

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