Datasheets
FDC653N by:

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ, 3000-REEL

Part Details for FDC653N by onsemi

Overview of FDC653N by onsemi

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Price & Stock for FDC653N

Part # Distributor Description Stock Price Buy
DISTI # 58M6623
Newark Mosfet Transistor, N Channel, 5 A, 30 V, 35 Mohm, 10 V, 1.7 V Rohs Compliant: Yes |Onsemi FDC653N Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 5275
  • 1 $0.3520
$0.3520 Buy Now
DISTI # 67R2042
Newark Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V, Power Dissipation:1.6W Rohs Compliant: Yes |Onsemi FDC653N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.2480
  • 6,000 $0.2460
  • 12,000 $0.2380
  • 18,000 $0.2370
  • 30,000 $0.2360
$0.2360 / $0.2480 Buy Now
DISTI # 58K8827
Newark N Channel Mosfet, 30V, 5A, Super Sot-6, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi FDC653N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 2,500 $0.2880
$0.2880 Buy Now
DISTI # FDC653NCT-ND
DigiKey MOSFET N-CH 30V 5A SUPERSOT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4720
In Stock
  • 1 $0.6600
  • 10 $0.5720
  • 100 $0.3959
  • 500 $0.3308
  • 1,000 $0.2815
  • 3,000 $0.2507
  • 6,000 $0.2375
  • 9,000 $0.2199
  • 30,000 $0.2177
$0.2177 / $0.6600 Buy Now
DISTI # FDC653N
Avnet Americas Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC653N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2578
  • 6,000 $0.2509
  • 12,000 $0.2439
  • 18,000 $0.2369
  • 24,000 $0.2299
  • 30,000 $0.2230
  • 300,000 $0.2160
$0.2160 / $0.2578 Buy Now
DISTI # 512-FDC653N
Mouser Electronics MOSFET SSOT-6 N-CH 30V RoHS: Compliant 66243
  • 1 $0.6600
  • 10 $0.5100
  • 100 $0.3830
  • 500 $0.3270
  • 1,000 $0.2510
  • 3,000 $0.2330
  • 6,000 $0.2280
  • 9,000 $0.2190
  • 24,000 $0.2170
$0.2170 / $0.6600 Buy Now
Future Electronics N-Channel 30 V 0.035 Ohm Enhancement Mode Field Effect Transistor - SSOT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 18000
Reel
  • 3,000 $0.2350
  • 6,000 $0.2300
  • 9,000 $0.2300
  • 12,000 $0.2250
  • 15,000 $0.2200
$0.2200 / $0.2350 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 5A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 6000
  • 1 $0.2540
  • 25 $0.2489
  • 100 $0.2388
  • 500 $0.2286
  • 1,000 $0.2159
$0.2159 / $0.2540 Buy Now
DISTI # FDC653N
TME Transistor: N-MOSFET, unipolar, 30V, 5A, 1.6W, SuperSOT-6 Min Qty: 3 1959
  • 3 $0.5480
  • 25 $0.4090
  • 100 $0.3620
  • 500 $0.3380
  • 3,000 $0.3120
$0.3120 / $0.5480 Buy Now
Ameya Holding Limited N-Channel 30 V 0.035 Ohm Enhancement Mode Field Effect Transistor - SSOT-6 51941
RFQ
DISTI # SMC-FDC653N
Sensible Micro Corporation Onsemi RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 09+ Container: Cut Tape 90
  • 100 $0.3040
  • 500 $0.3040
  • 1,000 $0.3040
$0.3040 RFQ
DISTI # FDC653N
Avnet Asia Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R (Alt: FDC653N) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 6,000 $0.2292
  • 12,000 $0.2262
  • 18,000 $0.2233
  • 30,000 $0.2205
  • 60,000 $0.2151
  • 150,000 $0.2099
  • 300,000 $0.2049
$0.2049 / $0.2292 Buy Now
DISTI # FDC653N
Avnet Silica Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R (Alt: FDC653N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 3000
Buy Now
DISTI # FDC653N
EBV Elektronik Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R (Alt: FDC653N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation N-Channel 30 V 0.035 Ohm Enhancement Mode Field Effect Transistor - SSOT-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 21000
  • 3,000 $0.3143
  • 21,000 $0.2933
$0.2933 / $0.3143 Buy Now
Sense Electronic Company Limited SOT23-6 20000
RFQ

Part Details for FDC653N

FDC653N CAD Models

FDC653N Part Data Attributes:

FDC653N onsemi
Buy Now Datasheet
Compare Parts:
FDC653N onsemi N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description SUPERSOT-6
Manufacturer Package Code 419BL
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 39 Weeks, 4 Days
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC653N

This table gives cross-reference parts and alternative options found for FDC653N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC653N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC653N Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC653N vs FDC653N
FDC653ND87Z Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC653N vs FDC653ND87Z
FDC653N_NL Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC653N vs FDC653N_NL
Part Number Description Manufacturer Compare
FDC653N Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC653N vs FDC653N
FDC653ND87Z Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC653N vs FDC653ND87Z
FDC653N_NL Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC653N vs FDC653N_NL

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