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N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58M6623
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Newark | Mosfet Transistor, N Channel, 5 A, 30 V, 35 Mohm, 10 V, 1.7 V Rohs Compliant: Yes |Onsemi FDC653N Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5275 |
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$0.3520 | Buy Now |
DISTI #
67R2042
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V, Power Dissipation:1.6W Rohs Compliant: Yes |Onsemi FDC653N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2360 / $0.2480 | Buy Now |
DISTI #
58K8827
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Newark | N Channel Mosfet, 30V, 5A, Super Sot-6, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi FDC653N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2880 | Buy Now |
DISTI #
FDC653NCT-ND
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DigiKey | MOSFET N-CH 30V 5A SUPERSOT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4720 In Stock |
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$0.2177 / $0.6600 | Buy Now |
DISTI #
FDC653N
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Avnet Americas | Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC653N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.2160 / $0.2578 | Buy Now |
DISTI #
512-FDC653N
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Mouser Electronics | MOSFET SSOT-6 N-CH 30V RoHS: Compliant | 66243 |
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$0.2170 / $0.6600 | Buy Now |
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Future Electronics | N-Channel 30 V 0.035 Ohm Enhancement Mode Field Effect Transistor - SSOT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 18000Reel |
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$0.2200 / $0.2350 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 5A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 6000 |
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$0.2159 / $0.2540 | Buy Now |
DISTI #
FDC653N
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TME | Transistor: N-MOSFET, unipolar, 30V, 5A, 1.6W, SuperSOT-6 Min Qty: 3 | 1959 |
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$0.3120 / $0.5480 | Buy Now |
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Ameya Holding Limited | N-Channel 30 V 0.035 Ohm Enhancement Mode Field Effect Transistor - SSOT-6 | 51941 |
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RFQ |
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FDC653N
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC653N
onsemi
N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 39 Weeks, 4 Days | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDC653N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC653N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDC653N | Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC653N vs FDC653N |
FDC653ND87Z | Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC653N vs FDC653ND87Z |
FDC653N_NL | Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC653N vs FDC653N_NL |