Part Details for FDC637BNZ by Fairchild Semiconductor Corporation
Overview of FDC637BNZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDC637BNZ
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1801 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SO | 1304 |
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$0.2706 / $0.9020 | Buy Now |
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Win Source Electronics | MOSFET N-CH 20V 6.2A 6-SSOT | 250000 |
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$0.1890 / $0.2830 | Buy Now |
Part Details for FDC637BNZ
FDC637BNZ CAD Models
FDC637BNZ Part Data Attributes:
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FDC637BNZ
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDC637BNZ
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6, 6 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SSOT | |
| Package Description | SUPERSOT-6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6.2 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 117 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDC637BNZ
This table gives cross-reference parts and alternative options found for FDC637BNZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC637BNZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF504 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | FDC637BNZ vs SDF504 |
| IFN421 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78 | InterFET Corporation | FDC637BNZ vs IFN421 |
| LS5907 | Small Signal Field-Effect Transistor, | Linear Integrated Systems | FDC637BNZ vs LS5907 |
| NTUD3127CT5G | 160mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 527AA-01, 6 PIN | Rochester Electronics LLC | FDC637BNZ vs NTUD3127CT5G |
| SI3459BDV-T1-E3 | Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | FDC637BNZ vs SI3459BDV-T1-E3 |
| SI3433CDV-T1-GE3 | Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | FDC637BNZ vs SI3433CDV-T1-GE3 |
| NDS8926/D84Z | 5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | FDC637BNZ vs NDS8926/D84Z |
| 2N5907 | TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, HERMETIC SEALED, TO-78, 6 PIN, FET General Purpose Small Signal | Micross Components | FDC637BNZ vs 2N5907 |
| U423 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, 0.022 X 0.022 INCH, DIE-6 | Solitron Devices Inc | FDC637BNZ vs U423 |
| SDF509 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | FDC637BNZ vs SDF509 |