Datasheets
FDC6312P by:
onsemi
Fairchild Semiconductor Corporation
onsemi
Rochester Electronics LLC
Tech Public
Not Found

Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ, TSOT-23-6, 3000-REEL

Part Details for FDC6312P by onsemi

Results Overview of FDC6312P by onsemi

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Applications Industrial Automation Energy and Power Systems Renewable Energy Automotive

FDC6312P Information

FDC6312P by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDC6312P

Part # Distributor Description Stock Price Buy
DISTI # 47T5016
Newark Dual Mosfet, Dual P Channel, -2.3 A, -20 V, 115 Mohm, -4.5 V, -900 Mv Rohs Compliant: Yes |Onsemi FDC6312P RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 14057
  • 1 $0.9700
  • 25 $0.7760
  • 100 $0.4660
  • 500 $0.3690
  • 1,000 $0.2700
  • 2,500 $0.2530
  • 10,000 $0.2390
  • 25,000 $0.2330
$0.2330 / $0.9700 Buy Now
DISTI # 67R2031
Newark Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N Channel:-, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:-, Continuous Drain Current Id P Channel:2.3A, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC6312P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.2790
  • 6,000 $0.2770
  • 12,000 $0.2760
  • 18,000 $0.2730
  • 30,000 $0.2690
$0.2690 / $0.2790 Buy Now
DISTI # FDC6312PCT-ND
DigiKey MOSFET 2P-CH 20V 2.3A SSOT6 Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 12171
In Stock
  • 1 $1.1700
  • 10 $0.7340
  • 100 $0.4825
  • 500 $0.3743
  • 1,000 $0.3395
  • 3,000 $0.2952
  • 6,000 $0.2730
  • 9,000 $0.2616
  • 15,000 $0.2500
$0.2500 / $1.1700 Buy Now
DISTI # FDC6312P
Avnet Americas Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6312P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2440
  • 6,000 $0.2410
  • 12,000 $0.2390
  • 18,000 $0.2370
  • 24,000 $0.2352
$0.2352 / $0.2440 Buy Now
DISTI # 512-FDC6312P
Mouser Electronics MOSFETs SSOT-6 P-CH DUAL RoHS: Compliant 7847
  • 1 $0.5800
  • 10 $0.5730
  • 100 $0.4180
  • 500 $0.3400
  • 1,000 $0.3150
  • 3,000 $0.2630
  • 9,000 $0.2500
  • 24,000 $0.2430
$0.2430 / $0.5800 Buy Now
DISTI # V72:2272_06298560
Arrow Electronics Trans MOSFET P-CH 20V 2.3A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2334 Container: Cut Strips Americas - 5700
  • 1 $0.3120
  • 10 $0.3038
  • 25 $0.3025
  • 100 $0.2762
  • 250 $0.2734
  • 500 $0.2581
  • 1,000 $0.2573
  • 3,000 $0.2565
$0.2565 / $0.3120 Buy Now
Future Electronics Dual P-Channel 20V 115 mOhm 1.8V PowerTrench Specified Mosfet SSOT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks Container: Reel 66000
Reel
  • 3,000 $0.2500
  • 6,000 $0.2450
  • 15,000 $0.2400
$0.2400 / $0.2500 Buy Now
Onlinecomponents.com Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ 0
  • 3,000 $0.2632
  • 6,000 $0.2532
  • 9,000 $0.2494
  • 12,000 $0.2456
  • 27,000 $0.2419
  • 51,000 $0.2383
$0.2383 / $0.2632 Buy Now
DISTI # 70395203
Verical Trans MOSFET P-CH 20V 2.3A 6-Pin TSOT-23 T/R RoHS: Compliant Min Qty: 23 Package Multiple: 1 Date Code: 2334 Americas - 5700
  • 23 $0.3038
  • 25 $0.3025
  • 100 $0.2762
  • 250 $0.2734
  • 500 $0.2581
  • 1,000 $0.2573
  • 3,000 $0.2565
$0.2565 / $0.3038 Buy Now
DISTI # FDC6312P
TME Transistor: P-MOSFET x2, unipolar, -20V, -2.3A, 0.96W, SuperSOT-6 Min Qty: 1 117
  • 1 $0.5890
  • 10 $0.3530
  • 25 $0.3250
  • 100 $0.3090
  • 250 $0.2780
  • 500 $0.2590
  • 1,000 $0.2410
$0.2410 / $0.5890 Buy Now
DISTI # FDC6312P
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 0
  • 6,000 $0.1800
$0.1800 Buy Now
DISTI # FDC6312P
Avnet Silica Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R (Alt: FDC6312P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDC6312P
EBV Elektronik Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R (Alt: FDC6312P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days EBV - 3000
Buy Now
LCSC 20V 2.3A 115m4.5V2.3A 960mW 400mV250uA SuperSOT-6 MOSFETs ROHS 2628
  • 1 $0.4280
  • 10 $0.3402
  • 30 $0.3018
  • 100 $0.2556
  • 500 $0.2340
  • 1,000 $0.2217
$0.2217 / $0.4280 Buy Now
New Advantage Corporation Dual P-Channel 20V 115 mOhm 1.8V PowerTrench Specified Mosfet SSOT-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 60000
  • 3,000 $0.3571
  • 60,000 $0.3333
$0.3333 / $0.3571 Buy Now
Wuhan P&S Dual P-Ch MOSFET -20V,-2.3A,115m�� Min Qty: 1 24000
  • 1 $0.6972
  • 100 $0.4451
  • 500 $0.3670
  • 1,000 $0.3374
$0.3374 / $0.6972 Buy Now

Part Details for FDC6312P

FDC6312P CAD Models

FDC6312P Part Data Attributes

FDC6312P onsemi
Buy Now Datasheet
Compare Parts:
FDC6312P onsemi Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ, TSOT-23-6, 3000-REEL
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Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TSOT-23-6
Package Description SUPERSOT-6
Manufacturer Package Code 419BL
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.3 A
Drain-source On Resistance-Max 0.115 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.96 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC6312P

This table gives cross-reference parts and alternative options found for FDC6312P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6312P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDC6312PS62Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6312P vs FDC6312PS62Z
FDC6312PL99Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6312P vs FDC6312PL99Z
FDC6312P_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6312P vs FDC6312P_NL
FDC6312PD87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6312P vs FDC6312PD87Z
FDC6310P onsemi $0.3281 Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2.2A, 125mΩ, TSOT-23-6, 3000-REEL FDC6312P vs FDC6310P
FDC6310PD84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6312P vs FDC6310PD84Z
FDC6312PD84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6312P vs FDC6312PD84Z
FDC6310PD87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC6312P vs FDC6310PD87Z

FDC6312P Related Parts

FDC6312P Frequently Asked Questions (FAQ)

  • A good PCB layout for the FDC6312P involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded cable for the output and keeping the cable length as short as possible can help minimize EMI.

  • To ensure proper biasing, make sure to connect the EN pin to a voltage source between 2.5V and 5.5V, and the VIN pin to a voltage source between 2.5V and 18V. Also, ensure that the input voltage is stable and within the recommended range to prevent oscillations.

  • The maximum current rating for the FDC6312P is 2A. However, it's recommended to derate the current to 1.5A for continuous operation to ensure reliability and prevent overheating.

  • To protect the FDC6312P from overvoltage and undervoltage conditions, use a voltage regulator or a voltage supervisor to regulate the input voltage. Additionally, consider adding overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage to the device.

  • To manage thermal issues, ensure good airflow around the device, and consider using a heat sink or thermal pad to dissipate heat. Also, operate the device within the recommended temperature range (-40°C to 125°C) to prevent overheating.