Datasheets
FDC5661N_F085 by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Hongxing Electrical Ltd
onsemi
Not Found

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6

Part Details for FDC5661N_F085 by Fairchild Semiconductor Corporation

Results Overview of FDC5661N_F085 by Fairchild Semiconductor Corporation

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FDC5661N_F085 Information

FDC5661N_F085 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
UPD78F0856MAA-FAA-G Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion), , /

Part Details for FDC5661N_F085

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FDC5661N_F085 Part Data Attributes

FDC5661N_F085 Fairchild Semiconductor Corporation
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FDC5661N_F085 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4.3A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description ROHS COMPLIANT, SUPERSOT-6
Pin Count 6
Manufacturer Package Code 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDC5661N_F085 Related Parts

FDC5661N_F085 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDC5661N_F085 is -40°C to 150°C.

  • The recommended storage temperature range for the FDC5661N_F085 is -40°C to 150°C.

  • The maximum power dissipation for the FDC5661N_F085 is 1.4W.

  • The thermal resistance junction-to-ambient for the FDC5661N_F085 is 125°C/W.

  • Yes, the FDC5661N_F085 is RoHS compliant.