Datasheets
FDC5614P by:

Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6

Part Details for FDC5614P by Fairchild Semiconductor Corporation

Overview of FDC5614P by Fairchild Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDC5614P

Part # Distributor Description Stock Price Buy
DISTI # SMC-FDC5614P
Sensible Micro Corporation Onsemi RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2011+ Container: Tape & Reel 257
  • 100 $0.2850
  • 500 $0.2775
  • 1,000 $0.2400
$0.2400 / $0.2850 RFQ
Chip 1 Exchange INSTOCK 755
RFQ
Chip1Cloud MOSFET P-CH 60V 3A SSOT-6 6000
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 3
  • 1 $1.1500
  • 100 $0.8700
  • 1,000 $0.7500
$0.7500 / $1.1500 Buy Now
Win Source Electronics MOSFET P-CH 60V 3A SSOT-6 1080000
  • 180 $0.2830
  • 435 $0.2320
  • 670 $0.2250
  • 920 $0.2180
  • 1,185 $0.2110
  • 1,590 $0.1890
$0.1890 / $0.2830 Buy Now

Part Details for FDC5614P

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FDC5614P Part Data Attributes:

FDC5614P Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDC5614P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description LEAD FREE, SUPERSOT-6
Pin Count 6
Manufacturer Package Code 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC5614P

This table gives cross-reference parts and alternative options found for FDC5614P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC5614P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC5614P P-Channel PowerTrench® MOSFET, Logic Level, 60V -3A, 105mΩ, 3000-REEL onsemi FDC5614P vs FDC5614P
FDC5614P 3000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 Rochester Electronics LLC FDC5614P vs FDC5614P
FDC5614P_NF073 Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 Fairchild Semiconductor Corporation FDC5614P vs FDC5614P_NF073
Part Number Description Manufacturer Compare
FDC5614P 3000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 Rochester Electronics LLC FDC5614P vs FDC5614P
FDC5614P P-Channel PowerTrench® MOSFET, Logic Level, 60V -3A, 105mΩ, 3000-REEL onsemi FDC5614P vs FDC5614P
FDC5614P_NF073 Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 Fairchild Semiconductor Corporation FDC5614P vs FDC5614P_NF073
FDFS2P106A_NL Power Field-Effect Transistor, 3A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDC5614P vs FDFS2P106A_NL
FDFS2P106A Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -60V, -3.0 A, 110 mΩ, 2500-REEL onsemi FDC5614P vs FDFS2P106A

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