Datasheets
FDC3601N_NL by: Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

Part Details for FDC3601N_NL by Fairchild Semiconductor Corporation

Overview of FDC3601N_NL by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for FDC3601N_NL

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FDC3601N_NL Part Data Attributes

FDC3601N_NL Fairchild Semiconductor Corporation
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FDC3601N_NL Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.7 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC3601N_NL

This table gives cross-reference parts and alternative options found for FDC3601N_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC3601N_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC3601N 1000mA, 100V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC FDC3601N_NL vs FDC3601N
FDC3601N Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC3601N_NL vs FDC3601N
FDC3601N-G Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDC3601N_NL vs FDC3601N-G
FDC3601NL99Z Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC3601N_NL vs FDC3601NL99Z
FDC3601ND84Z Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC3601N_NL vs FDC3601ND84Z
Part Number Description Manufacturer Compare
FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ, TSOT-23-6, 3000-REEL onsemi FDC3601N_NL vs FDC8602
FDC3601NL99Z Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC3601N_NL vs FDC3601NL99Z
FDC3601ND84Z Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET onsemi FDC3601N_NL vs FDC3601ND84Z

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