Datasheets
FDC3535 by:

Small Signal Field-Effect Transistor, 2.1A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, SUPERSOT-6

Part Details for FDC3535 by Fairchild Semiconductor Corporation

Overview of FDC3535 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDC3535

Part # Distributor Description Stock Price Buy
Win Source Electronics MOSFET P-CH 80V 6-SSOT / Trans MOSFET P-CH 80V 2.1A 6-Pin TSOT-23 T/R 20900
  • 135 $0.3715
  • 330 $0.3049
  • 510 $0.2953
  • 700 $0.2858
  • 905 $0.2763
  • 1,215 $0.2477
$0.2477 / $0.3715 Buy Now

Part Details for FDC3535

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FDC3535 Part Data Attributes

FDC3535 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDC3535 Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 2.1A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, SUPERSOT-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description ROHS COMPLIANT, SUPERSOT-6
Pin Count 6
Manufacturer Package Code 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 2.1 A
Drain-source On Resistance-Max 0.183 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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