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Part Details for FDBL0210N80 by onsemi
Overview of FDBL0210N80 by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDBL0210N80
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
01AC8513
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Newark | Fet 80V 2.0 Mohm Toll/Reel Rohs Compliant: Yes |Onsemi FDBL0210N80 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.9200 | Buy Now |
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DISTI #
FDBL0210N80CT-ND
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DigiKey | MOSFET N-CH 80V 240A 8HPSOF Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3660 In Stock |
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$2.8552 / $5.8700 | Buy Now |
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DISTI #
FDBL0210N80
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Avnet Americas | Trans MOSFET N-CH 80V 240A 8-Pin MO-299A T/R - Tape and Reel (Alt: FDBL0210N80) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 471237 Factory Stock |
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$2.7173 / $3.2433 | Buy Now |
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DISTI #
FDBL0210N80
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Avnet Americas | Trans MOSFET N-CH 80V 240A 8-Pin MO-299A T/R - Tape and Reel (Alt: FDBL0210N80) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 471237 Factory Stock |
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$2.7173 / $3.2433 | Buy Now |
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DISTI #
512-FDBL0210N80
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Mouser Electronics | MOSFET Code D IMR RoHS: Compliant | 3949 |
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$2.7300 / $4.4800 | Buy Now |
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Future Electronics | FDBL0210 Series N Channel 80V 240A 357W Mosfet HPSOF-8 RoHS: Compliant pbFree: No Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$2.7100 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 371866 |
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$2.7200 / $3.2000 | Buy Now |
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DISTI #
FDBL0210N80
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Avnet Asia | Trans MOSFET N-CH 80V 240A 8-Pin MO-299A T/R (Alt: FDBL0210N80) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 66 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
FDBL0210N80
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Avnet Silica | Trans MOSFET N-CH 80V 240A 8-Pin MO-299A T/R (Alt: FDBL0210N80) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 21 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
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DISTI #
FDBL0210N80
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EBV Elektronik | Trans MOSFET N-CH 80V 240A 8-Pin MO-299A T/R (Alt: FDBL0210N80) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 22 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FDBL0210N80
FDBL0210N80 CAD Models
FDBL0210N80 Part Data Attributes:
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FDBL0210N80
onsemi
Buy Now
Datasheet
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Compare Parts:
FDBL0210N80
onsemi
N-Channel PowerTrench® MOSFET, 80V, 240A, 2.0mΩ, 2000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 100CU | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 67 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 512 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 240 A | |
| Drain-source On Resistance-Max | 0.002 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-299A | |
| JESD-30 Code | R-PSSO-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |