There are no models available for this part yet.
Overview of FDB8870_F085 by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| UPD78F0856MAA-FAA-G | Renesas Electronics Corporation | 8-bit Microcontrollers (Non Promotion), , / |
Price & Stock for FDB8870_F085 by onsemi
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
FDB8870-F085
|
Avnet Americas | Trans MOSFET N-CH 30V 23A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB8870-F085) RoHS: Compliant Min Qty: 369 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 4800 Partner Stock |
|
$0.8416 / $1.0045 | Buy Now | |
|
DISTI #
FDB8870-F085
|
Avnet Americas | Trans MOSFET N-CH 30V 23A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB8870-F085) RoHS: Compliant Min Qty: 747 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 783 Partner Stock |
|
$0.7286 | Buy Now |
CAD Models for FDB8870_F085 by onsemi
Part Data Attributes for FDB8870_F085 by onsemi
|
|
|
|---|---|
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Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
ON SEMICONDUCTOR
|
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Manufacturer Package Code
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TO263A02
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Factory Lead Time
|
2 Days
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Avalanche Energy Rating (Eas)
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300 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
|
23 A
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Drain-source On Resistance-Max
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0.0044 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-263AB
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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245
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Polarity/Channel Type
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N-CHANNEL
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|
Power Dissipation-Max (Abs)
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160 W
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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Tin (Sn)
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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30
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Transistor Application
|
SWITCHING
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Transistor Element Material
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SILICON
|