Part Details for FDB8442 by Fairchild Semiconductor Corporation
Overview of FDB8442 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for FDB8442
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 80A, 40V, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 11540 |
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$1.5600 / $1.8300 | Buy Now |
Part Details for FDB8442
FDB8442 CAD Models
FDB8442 Part Data Attributes:
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FDB8442
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDB8442
Fairchild Semiconductor Corporation
40V N-Channel PowerTrench® MOSFET, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, 3 PIN | |
Pin Count | 2 | |
Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 720 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.005 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 254 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDB8442
This table gives cross-reference parts and alternative options found for FDB8442. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB8442, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB039N04LG | Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDB8442 vs IPB039N04LG |
NP80N04NUG-S18-AY | Power MOSFETs for Automotive, MP-25SK, /Tube | Renesas Electronics Corporation | FDB8442 vs NP80N04NUG-S18-AY |
NP80N04PDG-E1B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | FDB8442 vs NP80N04PDG-E1B-AY |
NP80N04PDG-E2B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | FDB8442 vs NP80N04PDG-E2B-AY |
IPB80N04S3H4ATMA1 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDB8442 vs IPB80N04S3H4ATMA1 |
IPB039N04LGATMA1 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDB8442 vs IPB039N04LGATMA1 |
NP80N04NLG-S18-AY | Power MOSFETs for Automotive, MP-25SK, /Tube | Renesas Electronics Corporation | FDB8442 vs NP80N04NLG-S18-AY |
NP80N04PUG-E2B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | FDB8442 vs NP80N04PUG-E2B-AY |
NP80N04MLG-S18-AY | Power MOSFETs for Automotive, MP-25K, /Tube | Renesas Electronics Corporation | FDB8442 vs NP80N04MLG-S18-AY |
NP80N04PLG-E2B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | FDB8442 vs NP80N04PLG-E2B-AY |