Datasheets
FDB7030BL by:

Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

Part Details for FDB7030BL by Fairchild Semiconductor Corporation

Overview of FDB7030BL by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDB7030BL

Part # Distributor Description Stock Price Buy
DISTI # 2156-FDB7030BL-ND
DigiKey 60A, 30V, 0.009OHM, N-CHANNEL, Min Qty: 650 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 71207
In Stock
  • 650 $0.4600
$0.4600 Buy Now
Bristol Electronics   144
RFQ
Bristol Electronics   Min Qty: 5 97
  • 5 $1.1250
  • 19 $0.7313
  • 70 $0.4219
$0.4219 / $1.1250 Buy Now
Bristol Electronics   2097
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-263AB 71
  • 1 $0.8919
  • 7 $0.7433
  • 21 $0.5351
$0.5351 / $0.8919 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 837
  • 1 $1.4865
  • 68 $0.7433
  • 270 $0.5946
$0.5946 / $1.4865 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 580
  • 1 $1.4865
  • 68 $0.7433
  • 270 $0.5946
$0.5946 / $1.4865 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 468
  • 1 $1.4865
  • 82 $0.4460
  • 449 $0.3865
$0.3865 / $1.4865 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 35
  • 1 $1.4865
  • 4 $1.1892
  • 18 $0.8919
$0.8919 / $1.4865 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 77
  • 1 $1.5000
  • 4 $1.2000
  • 18 $0.7500
$0.7500 / $1.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-263AB 69
  • 1 $3.4200
  • 11 $2.1375
  • 36 $1.8810
$1.8810 / $3.4200 Buy Now
Rochester Electronics 80A, 30V, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 71783
  • 1 $0.4664
  • 25 $0.4571
  • 100 $0.4384
  • 500 $0.4198
  • 1,000 $0.3964
$0.3964 / $0.4664 Buy Now
ComSIT USA N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant Europe - 2870
RFQ
Velocity Electronics Our Stock 734
RFQ
Chip1Cloud MOSFET N-CH 30V 60A TO-263AB 21000
RFQ

Part Details for FDB7030BL

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FDB7030BL Part Data Attributes:

FDB7030BL Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDB7030BL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description TO-263AB, 3 PIN
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 73 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65 W
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDB7030BL

This table gives cross-reference parts and alternative options found for FDB7030BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB7030BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDB7030BL_NL Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation FDB7030BL vs FDB7030BL_NL
Part Number Description Manufacturer Compare
IRF3707ZL Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier FDB7030BL vs IRF3707ZL
IRLB8721PBF Power Field-Effect Transistor, 62A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG FDB7030BL vs IRLB8721PBF
FDB7030BL_NL Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation FDB7030BL vs FDB7030BL_NL
IRF3707PBF Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier FDB7030BL vs IRF3707PBF
IRL3103LPBF Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier FDB7030BL vs IRL3103LPBF
FDB6670SL99Z Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation FDB7030BL vs FDB6670SL99Z
IRF3707 Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier FDB7030BL vs IRF3707
IRF3707ZCLPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier FDB7030BL vs IRF3707ZCLPBF
IRF3707SPBF Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FDB7030BL vs IRF3707SPBF
IRF3707ZLPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier FDB7030BL vs IRF3707ZLPBF

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