Datasheets
FDB44N25TM by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
onsemi
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Power Field-Effect Transistor, 44A I(D), 250V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Part Details for FDB44N25TM by Fairchild Semiconductor Corporation

Results Overview of FDB44N25TM by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FDB44N25TM Information

FDB44N25TM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDB44N25TM

Part # Distributor Description Stock Price Buy
Quest Components 44A, 250V, 0.069OHM, N-CHANNEL, SI, POWER, MOSFET 5
  • 1 $6.0000
  • 3 $5.0000
  • 6 $4.4000
$4.4000 / $6.0000 Buy Now
Win Source Electronics MOSFET N-CH 250V 44A D2PAK 2971
  • 24 $2.1666
  • 57 $1.7778
  • 88 $1.7222
  • 120 $1.6667
  • 156 $1.6111
  • 208 $1.4444
$1.4444 / $2.1666 Buy Now

Part Details for FDB44N25TM

FDB44N25TM CAD Models

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FDB44N25TM Part Data Attributes

FDB44N25TM Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDB44N25TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 44A I(D), 250V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 2055 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.069 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 307 W
Pulsed Drain Current-Max (IDM) 176 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDB44N25TM Related Parts

FDB44N25TM Frequently Asked Questions (FAQ)

  • The FDB44N25TM is a power MOSFET, and as such, it does not have a specific maximum operating frequency. However, it is typically used in switching applications up to 100 kHz.

  • To ensure proper thermal management, it is recommended to attach a heat sink to the device, and to ensure good thermal contact between the device and the heat sink. Additionally, the PCB should be designed to minimize thermal resistance.

  • The maximum voltage that can be applied to the gate of the FDB44N25TM is ±20V. Exceeding this voltage can damage the device.

  • To protect the FDB44N25TM from ESD, it is recommended to handle the device in an ESD-controlled environment, and to use ESD protection devices such as wrist straps and mats.

  • The maximum current that the FDB44N25TM can handle is 44A. Exceeding this current can cause the device to overheat and fail.