Part Details for FDB2532 by onsemi
Overview of FDB2532 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDB2532
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
61M6190
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Newark | Mosfet Transistor, N Channel, 33 A, 150 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FDB2532 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1595 |
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$2.9800 / $4.4000 | Buy Now |
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DISTI #
28H9658
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Newark | N Channel Mosfet, 150V, 79A, To-263Ab, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:79A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FDB2532 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.8900 | Buy Now |
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DISTI #
67R2023
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:79A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Power Dissipation:310W Rohs Compliant: Yes |Onsemi FDB2532 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.4900 | Buy Now |
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DISTI #
FDB2532CT-ND
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DigiKey | MOSFET N-CH 150V 8A/79A D2PAK Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2 In Stock |
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$2.0592 / $4.2300 | Buy Now |
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DISTI #
FDB2532
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Avnet Americas | Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB2532) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
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$1.6863 / $1.8876 | Buy Now |
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DISTI #
512-FDB2532
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Mouser Electronics | MOSFET 150V N-Channel QFET Trench RoHS: Compliant | 1425 |
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$2.2600 / $4.2300 | Buy Now |
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DISTI #
73928930
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RS | Transistor, N-channel, PowerTrench MOSFET, N-channel, 150V, 79A, 16mOhm | ON Semiconductor FDB2532 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$3.9900 / $4.2400 | RFQ |
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Future Electronics | N-Channel 150 V 0.075 Ohm Surface Mount PowerTrench Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 33600Reel |
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$2.0200 / $2.0900 | Buy Now |
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Future Electronics | N-Channel 150 V 0.075 Ohm Surface Mount PowerTrench Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$2.0200 / $2.0900 | Buy Now |
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Bristol Electronics | 810 |
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RFQ |
Part Details for FDB2532
FDB2532 CAD Models
FDB2532 Part Data Attributes
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FDB2532
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB2532
onsemi
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-263AB, 3 PIN | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 47 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 310 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB2532
This table gives cross-reference parts and alternative options found for FDB2532. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB2532, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDB2532 | Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | FDB2532 vs FDB2532 |