Part Details for FDB031N08 by Fairchild Semiconductor Corporation
Overview of FDB031N08 by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDB031N08
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 529 |
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$2.1123 / $5.1520 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 75V, 0.0031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 28 |
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$4.4850 / $6.7275 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 75V, 0.0031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 423 |
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$2.9900 / $6.9000 | Buy Now |
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ComSIT USA | 75 V, 235 A, 3.1 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 298 |
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RFQ |
Part Details for FDB031N08
FDB031N08 CAD Models
FDB031N08 Part Data Attributes:
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FDB031N08
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDB031N08
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO-263, SURFACE MOUNT (D2PAK) | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 1995 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0031 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 940 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |