Part Details for FDA15N65 by Fairchild Semiconductor Corporation
Overview of FDA15N65 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FDA15N65
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 16A, 650V, 0.44ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2274 |
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$1.9300 / $2.2800 | Buy Now |
Part Details for FDA15N65
FDA15N65 CAD Models
FDA15N65 Part Data Attributes:
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FDA15N65
Fairchild Semiconductor Corporation
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Datasheet
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FDA15N65
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3P | |
| Package Description | TO-3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, TO3, PLASTIC, EIAJ SC-65, ISOLATED | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 637 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.44 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 260 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for FDA15N65
This table gives cross-reference parts and alternative options found for FDA15N65. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA15N65, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 15N65L-T47-T | Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FDA15N65 vs 15N65L-T47-T |
| APT6045BVFR | Power Field-Effect Transistor, 15A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Microsemi Corporation | FDA15N65 vs APT6045BVFR |
| FMH16N60ES | Power Field-Effect Transistor, 16A I(D), 600V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), SC-65, 3 PIN | Fuji Electric Co Ltd | FDA15N65 vs FMH16N60ES |
| APT6041CLL | Power Field-Effect Transistor, 14A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Advanced Power Technology | FDA15N65 vs APT6041CLL |
| STB16NK60Z-S | 14A, 600V, 0.42ohm, N-CHANNEL, Si, POWER, MOSFET, I2SPAK-3 | STMicroelectronics | FDA15N65 vs STB16NK60Z-S |
| 15N65G-T47-T | Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FDA15N65 vs 15N65G-T47-T |
| FMP16N60ES | Power Field-Effect Transistor, 16A I(D), 600V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | FDA15N65 vs FMP16N60ES |
| APT6045BVFRG | Power Field-Effect Transistor, 15A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Microsemi Corporation | FDA15N65 vs APT6045BVFRG |