There are no models available for this part yet.
Overview of FD900R12IP4D by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for FD900R12IP4D by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
641-FD900R12IP4D
|
Mouser Electronics | IGBT Modules IGBT 1200V 900A RoHS: Compliant | 0 |
|
$407.0300 / $407.0400 | Order Now | |
| Quest Components | 1200V, N-CHANNEL IGBT | 1 |
|
$488.0850 | Buy Now |
CAD Models for FD900R12IP4D by Infineon Technologies AG
Part Data Attributes for FD900R12IP4D by Infineon Technologies AG
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Part Package Code
|
MODULE
|
|
Package Description
|
FLANGE MOUNT, R-XUFM-X8
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Pin Count
|
8
|
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Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Case Connection
|
ISOLATED
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|
Collector Current-Max (IC)
|
900 A
|
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Collector-Emitter Voltage-Max
|
1200 V
|
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Configuration
|
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JESD-30 Code
|
R-XUFM-X8
|
|
Moisture Sensitivity Level
|
1
|
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Number of Elements
|
1
|
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Number of Terminals
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8
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Operating Temperature-Max
|
175 °C
|
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Package Body Material
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UNSPECIFIED
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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|
Peak Reflow Temperature (Cel)
|
260
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Polarity/Channel Type
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N-CHANNEL
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|
Power Dissipation-Max (Abs)
|
5100 W
|
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Qualification Status
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Not Qualified
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|
Surface Mount
|
NO
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Terminal Form
|
UNSPECIFIED
|
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Terminal Position
|
UPPER
|
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Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
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Transistor Application
|
POWER CONTROL
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Transistor Element Material
|
SILICON
|
|
Turn-off Time-Nom (toff)
|
1300 ns
|
|
Turn-on Time-Nom (ton)
|
370 ns
|
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VCEsat-Max
|
2.05 V
|