Datasheets
FD800R45KL3KB5NPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 4500V V(BR)CES, N-Channel, MODULE-9

Part Details for FD800R45KL3KB5NPSA1 by Infineon Technologies AG

Overview of FD800R45KL3KB5NPSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for FD800R45KL3KB5NPSA1

Part # Distributor Description Stock Price Buy
DISTI # 448-FD800R45KL3KB5NPSA1-ND
DigiKey IGBT MOD 4500V 800A 9000W Min Qty: 1 Lead time: 52 Weeks Container: Tray 1
In Stock
  • 1 $2,217.1200
$2,217.1200 Buy Now
DISTI # 726-FD800R45KL3KB5NP
Mouser Electronics IGBT Modules IHV IHM T 0
  • 1 $2,217.1100
$2,217.1100 Order Now
Rochester Electronics FD800R45KL3-K_B5 - IHV, IHM T, XHP 3,3-6,5K RoHS: Not Compliant Status: Active Min Qty: 1 6
  • 1 $2,520.7000
  • 25 $2,470.2900
  • 100 $2,369.4600
  • 500 $2,268.6300
  • 1,000 $2,142.6000
$2,142.6000 / $2,520.7000 Buy Now
DISTI # SP001051120
EBV Elektronik (Alt: SP001051120) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FD800R45KL3KB5NPSA1

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FD800R45KL3KB5NPSA1 Part Data Attributes:

FD800R45KL3KB5NPSA1 Infineon Technologies AG
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FD800R45KL3KB5NPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 4500V V(BR)CES, N-Channel, MODULE-9
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PUFM-X9
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Date Of Intro 2018-01-15
Case Connection ISOLATED
Collector-Emitter Voltage-Max 4500 V
Configuration COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-PUFM-X9
Number of Elements 2
Number of Terminals 9
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 7350 ns
Turn-on Time-Nom (ton) 1050 ns

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