Datasheets
FD300R06KE3HOSA1 by:

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Part Details for FD300R06KE3HOSA1 by Infineon Technologies AG

Overview of FD300R06KE3HOSA1 by Infineon Technologies AG

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Price & Stock for FD300R06KE3HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FD300R06KE3HOSA1-ND
DigiKey IGBT MOD 600V 400A 940W Min Qty: 3 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT 8
In Stock
  • 3 $126.1300
$126.1300 Buy Now
DISTI # FD300R06KE3HOSA1-ND
DigiKey IGBT MOD 600V 400A 940W Min Qty: 3 Lead time: 16 Weeks Container: Tray Temporarily Out of Stock
  • 10 $120.8250
$120.8250 Buy Now
DISTI # FD300R06KE3HOSA1
Avnet Americas MEDIUM POWER 62MM - Trays (Alt: FD300R06KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $135.3460
$135.3460 Buy Now
Future Electronics 62 mm C-Series 600 V 300 A Trench Field stop IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 0
Tray
  • 1 $124.3800
  • 3 $122.6900
  • 5 $121.9100
  • 20 $119.8200
  • 30 $118.4600
$118.4600 / $124.3800 Buy Now
Bristol Electronics   9
RFQ
Quest Components   7
  • 1 $166.6240
  • 4 $149.9616
  • 8 $141.6304
$141.6304 / $166.6240 Buy Now
Rochester Electronics FD300R06 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 302
  • 1 $127.3400
  • 25 $124.7900
  • 100 $119.7000
  • 500 $114.6100
  • 1,000 $108.2400
$108.2400 / $127.3400 Buy Now
DISTI # FD300R06KE3
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 600V, screw Min Qty: 1 0
  • 1 $102.4100
  • 3 $89.9500
  • 10 $81.2800
$81.2800 / $102.4100 RFQ
Ameya Holding Limited IGBT MODULE VCES 600V 300A 1
RFQ

Part Details for FD300R06KE3HOSA1

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FD300R06KE3HOSA1 Part Data Attributes:

FD300R06KE3HOSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FD300R06KE3HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 400 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns

Alternate Parts for FD300R06KE3HOSA1

This table gives cross-reference parts and alternative options found for FD300R06KE3HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FD300R06KE3HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FD300R06KE3 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FD300R06KE3HOSA1 vs FD300R06KE3
Part Number Description Manufacturer Compare
APTGT300SK60 Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-5 Microsemi Corporation FD300R06KE3HOSA1 vs APTGT300SK60
APTGT300DA60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN Microsemi Corporation FD300R06KE3HOSA1 vs APTGT300DA60D3G
APTGT300DA60 Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-5 Microsemi Corporation FD300R06KE3HOSA1 vs APTGT300DA60
SKM300GAL063D Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, CASE D57, SEMITRANS3-7 SEMIKRON FD300R06KE3HOSA1 vs SKM300GAL063D
APTGT300SK60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN Microsemi Corporation FD300R06KE3HOSA1 vs APTGT300SK60D3G
APTGT300DA60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc FD300R06KE3HOSA1 vs APTGT300DA60G
FD300R06KE3 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FD300R06KE3HOSA1 vs FD300R06KE3
APTGF250SK60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN Microsemi Corporation FD300R06KE3HOSA1 vs APTGF250SK60D3G
APTGT300SK60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc FD300R06KE3HOSA1 vs APTGT300SK60D3G
SKM300GAR063D Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, CASE D58, SEMITRANS3-7 SEMIKRON FD300R06KE3HOSA1 vs SKM300GAR063D

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