Part Details for FD200R65KF2-K by Infineon Technologies AG
Overview of FD200R65KF2-K by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FD200R65KF2-K
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FD200R65KF2-K-ND
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DigiKey | IGBT MODULE Min Qty: 1 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
22 In Stock |
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$2,205.6200 | Buy Now |
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Rochester Electronics | FD200R65 - Insulated Gate Bipolar Transistor Module ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 22 |
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$1,802.6700 / $2,120.7900 | Buy Now |
Part Details for FD200R65KF2-K
FD200R65KF2-K CAD Models
FD200R65KF2-K Part Data Attributes
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FD200R65KF2-K
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FD200R65KF2-K
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1000A I(C), 6300V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Collector Current-Max (IC) | 1000 A | |
| Collector-Emitter Voltage-Max | 6300 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3800 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 6500 ns | |
| Turn-on Time-Nom (ton) | 1120 ns | |
| VCEsat-Max | 4.9 V |
Alternate Parts for FD200R65KF2-K
This table gives cross-reference parts and alternative options found for FD200R65KF2-K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FD200R65KF2-K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FD250R65KE3KNOSA1 | Insulated Gate Bipolar Transistor, 6500V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FD200R65KF2-K vs FD250R65KE3KNOSA1 |