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Transistors / IGBTs / FD1200R17HP4KB2BOSA2
Datasheets
FD1200R17HP4KB2BOSA2 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for FD1200R17HP4KB2BOSA2 by Infineon Technologies AG

Results Overview of FD1200R17HP4KB2BOSA2 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

FD1200R17HP4KB2BOSA2 Information

FD1200R17HP4KB2BOSA2 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FD1200R17HP4KB2BOSA2

Part # Distributor Description Stock Price Buy
DISTI # 448-FD1200R17HP4KB2BOSA2-ND
DigiKey IGBT MODULE 1700V 1200A Min Qty: 1 Lead time: 42 Weeks Container: Tray 4
In Stock
  • 1 $1,063.7800
$1,063.7800 Buy Now
DISTI # FD1200R17HP4KB2BOSA2
Avnet Americas IGBTs - Trays (Alt: FD1200R17HP4KB2BOSA2) RoHS: Compliant Min Qty: 2 Package Multiple: 2 Lead time: 42 Weeks, 0 Days Container: Tray 0
  • 2 $1,182.9290
$1,182.9290 Buy Now
Future Electronics 1700V IHMB 130mm chopper IGBT Module with IGBT4, AlSiC base-plate and Diode RoHS: Compliant pbFree: Yes Min Qty: 2 Package Multiple: 2 Lead time: 42 Weeks Container: Tray 0
Tray
  • 2 $1,072.0800
$1,072.0800 Buy Now
Rochester Electronics IGBT Module RoHS: Compliant Status: Active Min Qty: 1 36
  • 1 $1,181.9800
  • 25 $1,158.3400
  • 100 $1,111.0600
  • 500 $1,063.7800
  • 1,000 $1,004.6800
$1,004.6800 / $1,181.9800 Buy Now
DISTI # SP001051988
EBV Elektronik IGBTs (Alt: SP001051988) RoHS: Compliant Min Qty: 2 Package Multiple: 2 Lead time: 43 Weeks, 0 Days EBV - 42
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2 34
  • 1 $1,661.3300
  • 34 $1,537.3500
$1,537.3500 / $1,661.3300 Buy Now

Part Details for FD1200R17HP4KB2BOSA2

FD1200R17HP4KB2BOSA2 CAD Models

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FD1200R17HP4KB2BOSA2 Part Data Attributes

Parametric Data
FD1200R17HP4KB2BOSA2 Infineon Technologies AG
Buy Now Datasheet
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FD1200R17HP4KB2BOSA2 Infineon Technologies AG Insulated Gate Bipolar Transistor,
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-7
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 42 Weeks
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X7
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6500 W
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1800 ns
Turn-on Time-Nom (ton) 900 ns
VCEsat-Max 2.25 V

FD1200R17HP4KB2BOSA2 Frequently Asked Questions (FAQ)

  • The thermal resistance (Rth) of the FD1200R17HP4KB2BOSA2 is typically around 1.5 K/W (junction-to-case) and 3.5 K/W (junction-to-ambient) at a maximum junction temperature of 175°C.

  • To ensure reliability, follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities at high temperatures. Additionally, ensure proper PCB design, layout, and soldering to minimize thermal resistance and prevent hotspots.

  • The recommended gate drive voltage for the FD1200R17HP4KB2BOSA2 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. A higher gate drive voltage can improve switching performance, but may also increase power losses and EMI.

  • Yes, the FD1200R17HP4KB2BOSA2 can be used in a parallel configuration to increase power handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.

  • The FD1200R17HP4KB2BOSA2 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) ESD rating of ±2 kV and a machine model (MM) ESD rating of ±200 V are recommended.