Part Details for FD1000R33HL3KBPSA1 by Infineon Technologies AG
Overview of FD1000R33HL3KBPSA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Computing and Data Storage
Aerospace and Defense
Energy and Power Systems
Electronic Manufacturing
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Price & Stock for FD1000R33HL3KBPSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2156-FD1000R33HL3KBPSA1-ND
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DigiKey | IGBT MODULE 3300V 1000A Min Qty: 1 Lead time: 26 Weeks Container: Bulk MARKETPLACE PRODUCT |
42 In Stock |
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$2,384.0200 | Buy Now |
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DISTI #
FD1000R33HL3KBPSA1-ND
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DigiKey | IGBT MODULE 3300V 1000A Min Qty: 1 Lead time: 26 Weeks Container: Tray | Limited Supply - Call |
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$2,117.0700 | Buy Now |
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DISTI #
FD1000R33HL3KBPSA1
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Avnet Americas | TRACTION - Trays (Alt: FD1000R33HL3KBPSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
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$2,310.6720 / $2,805.8160 | Buy Now |
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Rochester Electronics | FD1000R33 - IGBT Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 42 |
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$2,045.9100 / $2,406.9500 | Buy Now |
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DISTI #
SP001181626
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EBV Elektronik | (Alt: SP001181626) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FD1000R33HL3KBPSA1
FD1000R33HL3KBPSA1 CAD Models
FD1000R33HL3KBPSA1 Part Data Attributes
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FD1000R33HL3KBPSA1
Infineon Technologies AG
Buy Now
Datasheet
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FD1000R33HL3KBPSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel, MODULE-9
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-9 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 3300 V | |
| Configuration | COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X9 | |
| Number of Elements | 2 | |
| Number of Terminals | 9 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 4700 ns | |
| Turn-on Time-Nom (ton) | 1050 ns |