Datasheets
FCP9N60N-F102 by: onsemi

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220, TO-220 3L, 800-TUBE

Part Details for FCP9N60N-F102 by onsemi

Results Overview of FCP9N60N-F102 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FCP9N60N-F102 Information

FCP9N60N-F102 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
REF102BU Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC -25 to 85
REF102AUG4 Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC
REF102CUG4 Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC -25 to 85

Price & Stock for FCP9N60N-F102

Part # Distributor Description Stock Price Buy
DISTI # FCP9N60N-F102
Avnet Americas N-Channel SupreMOS MOSFET 600V 9A 385mOhm 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP9N60N-F102) RoHS: Compliant Min Qty: 556 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 800 Partner Stock
  • 556 $1.1880
  • 560 $1.1700
  • 1,200 $1.1520
  • 2,800 $1.1340
  • 5,600 $1.1160
$1.1160 / $1.1880 Buy Now
Flip Electronics Stock, ship today 800
RFQ

Part Details for FCP9N60N-F102

FCP9N60N-F102 CAD Models

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FCP9N60N-F102 Part Data Attributes

FCP9N60N-F102 onsemi
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Compare Parts:
FCP9N60N-F102 onsemi Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220, TO-220 3L, 800-TUBE
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-220 3L
Package Description TO-220, 3 PIN
Manufacturer Package Code 221A
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 135 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.385 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83.3 W
Pulsed Drain Current-Max (IDM) 27 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 114.2 ns
Turn-on Time-Max (ton) 62.8 ns

Alternate Parts for FCP9N60N-F102

This table gives cross-reference parts and alternative options found for FCP9N60N-F102. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCP9N60N-F102, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FCP360N65S3R0 onsemi $2.2162 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220, TO-220-3, 800-TUBE FCP9N60N-F102 vs FCP360N65S3R0