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Transistors / Power Field-Effect Transistors / FCP165N60E
Datasheets
FCP165N60E by:
onsemi
Fairchild Semiconductor Corporation
onsemi
Not Found

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220, TO-220-3, 800-TUBE

Part Details for FCP165N60E by onsemi

Results Overview of FCP165N60E by onsemi

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Applications Energy and Power Systems Renewable Energy

FCP165N60E Information

FCP165N60E by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FCP165N60E

Part # Distributor Description Stock Price Buy
DISTI # 84Y5816
Newark Mosfet, N-Ch, 600V, 23A, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:23A,... Drain Source Voltage Vds:600V, On Resistance Rds(On):0.132Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Onsemi FCP165N60E more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1371
  • 1 $4.2500
  • 10 $3.6200
  • 25 $3.6000
  • 50 $3.5900
  • 100 $3.2200
$3.2200 / $4.2500 Buy Now
DISTI # FCP165N60E-ND
DigiKey MOSFET N-CH 600V 23A TO220 Min Qty: 1 Lead time: 13 Weeks Container: Tube, Tube 1119
In Stock
  • 1 $3.0400
  • 1 $4.3900
  • 10 $2.4070
  • 100 $1.9584
  • 800 $1.9289
$1.9289 / $4.3900 Buy Now
DISTI # FCP165N60E
Avnet Americas SUPERFET2 600V 165MOHM SLOW VERSION - Rail/Tube (Alt: FCP165N60E) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Tube 44000 Factory Stock
  • 800 $1.8818
  • 1,600 $1.8592
  • 3,200 $1.8370
  • 4,800 $1.8283
  • 6,400 $1.8154
$1.8154 / $1.8818 Buy Now
DISTI # 512-FCP165N60E
Mouser Electronics MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive RoHS: Compliant 3664
  • 1 $2.9800
  • 10 $2.3600
  • 50 $2.3500
  • 100 $1.9200
$1.9200 / $2.9800 Buy Now
Onlinecomponents.com N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220 RoHS: Compliant 0
  • 200 $4.0100
  • 400 $2.4700
  • 600 $1.9500
  • 800 $1.9200
$1.9200 / $4.0100 Buy Now
ComSIT USA AVAILABLE EU 150
RFQ
DISTI # FCP165N60E
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $1.9300
$1.9300 Buy Now
DISTI # SMC-FCP165N60E
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 200
RFQ
DISTI # FCP165N60E
Avnet Silica (Alt: FCP165N60E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FCP165N60E
EBV Elektronik (Alt: FCP165N60E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 70000
RFQ
Vyrian Transistors 545
RFQ

Part Details for FCP165N60E

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FCP165N60E Part Data Attributes

Parametric Data
FCP165N60E onsemi
Buy Now Datasheet
Compare Parts:
FCP165N60E onsemi Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220, TO-220-3, 800-TUBE
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 525 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.165 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 227 W
Pulsed Drain Current-Max (IDM) 69 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 257 ns
Turn-on Time-Max (ton) 101 ns

FCP165N60E Related Parts

FCP165N60E Frequently Asked Questions (FAQ)

  • The recommended gate resistor value for FCP165N60E is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase the turn-on time.

  • To ensure proper cooling, the FCP165N60E should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to provide good airflow, and the device should be mounted using a thermally conductive material such as thermal paste or thermal tape.

  • The maximum allowed voltage overshoot for FCP165N60E is typically 10% to 20% above the maximum rated voltage (650V). However, it's recommended to limit the voltage overshoot to less than 10% to ensure reliable operation and prevent damage to the device.

  • Yes, FCP165N60E can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.

  • The recommended dead time for FCP165N60E in a half-bridge configuration is typically between 100 ns to 500 ns, depending on the specific application and switching frequency. A longer dead time can help reduce shoot-through currents but may increase the switching losses.