Datasheets
FCH170N60 by:

Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for FCH170N60 by Fairchild Semiconductor Corporation

Overview of FCH170N60 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for FCH170N60

Part # Distributor Description Stock Price Buy
DISTI # 2156-FCH170N60-ND
DigiKey MOSFET N-CH 600V 22A TO247-3 Min Qty: 94 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 11671
In Stock
  • 94 $3.1900
$3.1900 Buy Now
Bristol Electronics   260
RFQ
Quest Components   208
  • 1 $7.3080
  • 15 $4.8720
  • 52 $4.5066
$4.5066 / $7.3080 Buy Now
Rochester Electronics Power Field-Effect Transistor, 22A, 600V, 0.17ohm, N-Channel, MOSFET, TO-247AB RoHS: Compliant Status: Active Min Qty: 1 274
  • 1 $3.0700
  • 25 $3.0100
  • 100 $2.8900
  • 500 $2.7600
  • 1,000 $2.6100
$2.6100 / $3.0700 Buy Now

Part Details for FCH170N60

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FCH170N60 Part Data Attributes

FCH170N60 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FCH170N60 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 525 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 227 W
Pulsed Drain Current-Max (IDM) 66 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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