Datasheets
FCD260N65S3 by: onsemi

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, DPAK N-Channel SuperFET� III MOSFET 650 V, 12 A, 260 m?, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FCD260N65S3 by onsemi

Overview of FCD260N65S3 by onsemi

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Price & Stock for FCD260N65S3

Part # Distributor Description Stock Price Buy
DISTI # 54AH6221
Newark Mosfet, N-Ch, 650V, 12A, 150Deg C, 90W Rohs Compliant: Yes |Onsemi FCD260N65S3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $2.4400
  • 10 $2.0900
  • 25 $1.9900
  • 50 $1.9000
  • 100 $1.7900
  • 250 $1.6600
  • 500 $1.5100
  • 1,000 $1.4200
$1.4200 / $2.4400 Buy Now
DISTI # 39AC0311
Newark Superfet3 260Mohm To252/ Reel Rohs Compliant: Yes |Onsemi FCD260N65S3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.4800
  • 3,000 $1.3900
  • 6,000 $1.3200
  • 12,000 $1.1900
  • 18,000 $1.1500
  • 30,000 $1.1000
$1.1000 / $1.4800 Buy Now
DISTI # 488-FCD260N65S3CT-ND
DigiKey MOSFET N-CH 650V 12A TO252 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2335
In Stock
  • 1 $2.0000
  • 10 $1.3610
  • 100 $0.9688
  • 500 $0.7949
  • 1,000 $0.7381
  • 2,500 $0.7250
$0.7250 / $2.0000 Buy Now
DISTI # FCD260N65S3
Avnet Americas Transistor MOSFET N-CH 650V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: FCD260N65S3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.7234
  • 5,000 $0.6988
  • 10,000 $0.6905
  • 15,000 $0.6872
  • 20,000 $0.6824
$0.6824 / $0.7234 Buy Now
DISTI # 863-FCD260N65S3
Mouser Electronics MOSFETs SUPERFET3 260MOHM TO252 2365
  • 1 $2.0000
  • 10 $1.3700
  • 100 $1.1000
  • 500 $1.0600
  • 2,500 $0.7250
$0.7250 / $2.0000 Buy Now
Future Electronics N-Channel 650 V 12 A 260 mOhm SMT SuperFET II Easy Drive Mosfet -TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks Container: Reel 0
Reel
  • 2,500 $0.7400
  • 5,000 $0.7100
$0.7100 / $0.7400 Buy Now
Future Electronics N-Channel 650 V 12 A 260 mOhm SMT SuperFET II Easy Drive Mosfet -TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks Container: Reel 0
Reel
  • 2,500 $0.7400
  • 5,000 $0.7100
$0.7100 / $0.7400 Buy Now
Onlinecomponents.com Mosfet, N-Ch, 650V, 12A, 150Deg C, 90W Rohs Compliant: Yes |Onsemi FCD260N65S3 RoHS: Compliant 0
  • 625 $1.5080
  • 1,250 $0.9280
  • 1,875 $0.7350
  • 2,500 $0.7200
$0.7200 / $1.5080 Buy Now
DISTI # FCD260N65S3
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $1.1000
$1.1000 Buy Now
DISTI # FCD260N65S3
Avnet Asia Transistor MOSFET N-CH 650V 12A 3-Pin TO-252 T/R (Alt: FCD260N65S3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days 0
  • 2,500 $0.7632
  • 5,000 $0.7532
  • 7,500 $0.7436
  • 12,500 $0.7342
  • 25,000 $0.7160
  • 62,500 $0.6988
  • 125,000 $0.6824
$0.6824 / $0.7632 Buy Now
DISTI # FCD260N65S3
Avnet Silica Transistor MOSFET N-CH 650V 12A 3-Pin TO-252 T/R (Alt: FCD260N65S3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FCD260N65S3
EBV Elektronik Transistor MOSFET N-CH 650V 12A 3-Pin TO-252 T/R (Alt: FCD260N65S3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 260MOHM TO252 19950
  • 35 $1.6448
  • 75 $1.3496
  • 115 $1.3075
  • 160 $1.2653
  • 205 $1.2231
  • 275 $1.0966
$1.0966 / $1.6448 Buy Now

Part Details for FCD260N65S3

FCD260N65S3 CAD Models

FCD260N65S3 Part Data Attributes

FCD260N65S3 onsemi
Buy Now Datasheet
Compare Parts:
FCD260N65S3 onsemi Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, DPAK N-Channel SuperFET� III MOSFET 650 V, 12 A, 260 m?, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 57 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.26 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 30 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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