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Transistors Power Field-Effect Transistors FCB20N60FTM

FCB20N60FTM
Description: Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3

Overview of FCB20N60FTM by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 8 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for FCB20N60FTM by Fairchild Semiconductor Corporation
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Part Data Attributes for FCB20N60FTM by Fairchild Semiconductor Corporation
Parametric Data

FCB20N60FTM
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
ROHS COMPLIANT, D2PAK-3
Pin Count
2
Manufacturer Package Code
2LD,TO263, SURFACE MOUNT
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
690 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.19 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
208 W
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FCB20N60FTM
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
    VS

Alternate Parts for FCB20N60FTM

This table gives cross-reference parts and alternative options found for FCB20N60FTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCB20N60FTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
APT20N60SCFG Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 Microsemi Corporation FCB20N60FTM vs APT20N60SCFG
APT20N60SC3G Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Microsemi Corporation FCB20N60FTM vs APT20N60SC3G
STB20NM65N 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics FCB20N60FTM vs STB20NM65N
STB25NM60N 21A, 600V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics FCB20N60FTM vs STB25NM60N
STB25NM60NT4 20A, 600V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics FCB20N60FTM vs STB25NM60NT4
APT20N60SC3 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Microsemi Corporation FCB20N60FTM vs APT20N60SC3
APT20N60SCF Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Microsemi Corporation FCB20N60FTM vs APT20N60SCF
STB23NM60ND N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK STMicroelectronics FCB20N60FTM vs STB23NM60ND

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