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Transistors Power Field-Effect Transistors FCB20N60_F085

FCB20N60_F085
Description: Power Field-Effect Transistor, 20A I(D), 600V, 0.198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2

Overview of FCB20N60_F085 by Fairchild Semiconductor Corporation

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
UPD78F0856MAA-FAA-G Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion), , /

CAD Models for FCB20N60_F085 by Fairchild Semiconductor Corporation
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Part Data Attributes for FCB20N60_F085 by Fairchild Semiconductor Corporation
Parametric Data

FCB20N60_F085
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
2
Manufacturer Package Code
2LD,TO263, SURFACE MOUNT
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
480 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.198 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FCB20N60_F085
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 20A I(D), 600V, 0.198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2
    VS

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