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Part Details for FCB11N60TM by onsemi
Overview of FCB11N60TM by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for FCB11N60TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31K6744
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Newark | N Channel Mosfet, 600V, 11A, D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5Vrohs Compliant: Yes |Onsemi FCB11N60TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.5500 / $2.0800 | Buy Now |
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DISTI #
FCB11N60TMCT-ND
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DigiKey | MOSFET N-CH 600V 11A D2PAK Min Qty: 1 Lead time: 25 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1275 In Stock |
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$1.5428 / $3.5800 | Buy Now |
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DISTI #
FCB11N60TM
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Avnet Americas | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB11N60TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$1.4810 / $1.5119 | Buy Now |
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DISTI #
512-FCB11N60TM
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Mouser Electronics | MOSFETs HIGH POWER RoHS: Compliant | 17 |
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$1.7700 / $3.5800 | Buy Now |
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Future Electronics | FCB11N60 Series 600 V 11 A 380 mOhm N-Channel SuperFET Mosfet - D²PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks Container: Reel | 0Reel |
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$1.5100 / $1.5600 | Buy Now |
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Future Electronics | FCB11N60 Series 600 V 11 A 380 mOhm N-Channel SuperFET Mosfet - D²PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 25 Weeks Container: Reel | 0Reel |
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$1.5100 / $1.5600 | Buy Now |
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Onlinecomponents.com | N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK RoHS: Compliant | 0 |
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$1.5100 / $1.7600 | Buy Now |
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DISTI #
85986949
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Verical | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R Min Qty: 187 Package Multiple: 1 Date Code: 2001 | Americas - 277967 |
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$1.8125 / $2.0125 | Buy Now |
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DISTI #
85985469
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Verical | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R Min Qty: 187 Package Multiple: 1 Date Code: 1901 | Americas - 3352 |
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$1.8125 / $2.0125 | Buy Now |
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Rochester Electronics | FCB11N60TM - Power Field-Effect Transistor RoHS: Compliant Status: Active Min Qty: 1 | 7 |
|
$1.4500 / $1.7100 | Buy Now |
Part Details for FCB11N60TM
FCB11N60TM CAD Models
FCB11N60TM Part Data Attributes
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FCB11N60TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FCB11N60TM
onsemi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 25 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |