Datasheets
FCA20N60S by:

Power Field-Effect Transistor, 20A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for FCA20N60S by Fairchild Semiconductor Corporation

Overview of FCA20N60S by Fairchild Semiconductor Corporation

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Price & Stock for FCA20N60S

Part # Distributor Description Stock Price Buy
Chip1Cloud 600V N-Channel MOSFET 19000
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Part Details for FCA20N60S

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FCA20N60S Part Data Attributes

FCA20N60S Fairchild Semiconductor Corporation
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FCA20N60S Fairchild Semiconductor Corporation Power Field-Effect Transistor, 20A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3P
Package Description TO-3P, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 450 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.26 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 260 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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