Part Details for F575R06KE3B5BOSA1 by Infineon Technologies AG
Overview of F575R06KE3B5BOSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Entertainment and Gaming
Price & Stock for F575R06KE3B5BOSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000311490
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EBV Elektronik | LOW POWER ECONO (Alt: SP000311490) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Part Details for F575R06KE3B5BOSA1
F575R06KE3B5BOSA1 CAD Models
F575R06KE3B5BOSA1 Part Data Attributes
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F575R06KE3B5BOSA1
Infineon Technologies AG
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Datasheet
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F575R06KE3B5BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | COMPLEX | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X35 | |
Number of Elements | 2 | |
Number of Terminals | 35 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-Channel | |
Power Dissipation-Max (Abs) | 250 W | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 270 ns | |
Turn-on Time-Nom (ton) | 45 ns | |
VCEsat-Max | 1.9 V |