Datasheets
F475R12KS4B11BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-24

Part Details for F475R12KS4B11BOSA1 by Infineon Technologies AG

Overview of F475R12KS4B11BOSA1 by Infineon Technologies AG

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Price & Stock for F475R12KS4B11BOSA1

Part # Distributor Description Stock Price Buy
DISTI # F475R12KS4B11BOSA1-ND
DigiKey IGBT MOD 1200V 100A 500W Lead time: 18 Weeks Container: Bulk Limited Supply - Call
Buy Now
DISTI # F475R12KS4B11BOSA1
Avnet Americas LOW POWER ECONO - Trays (Alt: F475R12KS4B11BOSA1) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
RFQ
DISTI # SP000724906
EBV Elektronik LOW POWER ECONO (Alt: SP000724906) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 37 Weeks, 0 Days EBV - 0
Buy Now

Part Details for F475R12KS4B11BOSA1

F475R12KS4B11BOSA1 CAD Models

F475R12KS4B11BOSA1 Part Data Attributes

F475R12KS4B11BOSA1 Infineon Technologies AG
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F475R12KS4B11BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-24
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT PACKAGE-24
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X24
Number of Elements 4
Number of Terminals 24
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 390 ns
Turn-on Time-Nom (ton) 190 ns

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