Datasheets
F450R07W1H3B11ABOMA1 by:

Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, MODULE-20

Part Details for F450R07W1H3B11ABOMA1 by Infineon Technologies AG

Overview of F450R07W1H3B11ABOMA1 by Infineon Technologies AG

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Price & Stock for F450R07W1H3B11ABOMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-F450R07W1H3B11ABOMA1-ND
DigiKey IGBT MODULES Min Qty: 24 Lead time: 26 Weeks Container: Tray Temporarily Out of Stock
  • 24 $39.5087
$39.5087 Buy Now
DISTI # 726-F450R07W1H3B11AB
Mouser Electronics IGBT Modules EASY PACK SI RoHS: Compliant 2
  • 1 $44.3300
  • 10 $39.5000
  • 24 $38.1500
  • 48 $37.5400
  • 120 $36.9800
$36.9800 / $44.3300 Buy Now
Ameya Holding Limited   1
RFQ
DISTI # SP000931906
EBV Elektronik IGBT Module, Full Bridge, 55 A, 1.5 V, 200 W, 175 �C (Alt: SP000931906) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

Part Details for F450R07W1H3B11ABOMA1

F450R07W1H3B11ABOMA1 CAD Models

F450R07W1H3B11ABOMA1 Part Data Attributes

F450R07W1H3B11ABOMA1 Infineon Technologies AG
Buy Now Datasheet
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F450R07W1H3B11ABOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, MODULE-20
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X20
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 55 A
Collector-Emitter Voltage-Max 650 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X20
Number of Elements 4
Number of Terminals 20
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 203 ns
Turn-on Time-Nom (ton) 32 ns

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