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Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, MODULE-20
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-F450R07W1H3B11ABOMA1-ND
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DigiKey | IGBT MODULES Min Qty: 24 Lead time: 26 Weeks Container: Tray | Temporarily Out of Stock |
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$39.5087 | Buy Now |
DISTI #
726-F450R07W1H3B11AB
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Mouser Electronics | IGBT Modules EASY PACK SI RoHS: Compliant | 2 |
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$36.9800 / $44.3300 | Buy Now |
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Ameya Holding Limited | 1 |
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RFQ | ||
DISTI #
SP000931906
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EBV Elektronik | IGBT Module, Full Bridge, 55 A, 1.5 V, 200 W, 175 �C (Alt: SP000931906) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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F450R07W1H3B11ABOMA1
Infineon Technologies AG
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Datasheet
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F450R07W1H3B11ABOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, MODULE-20
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-XUFM-X20 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 55 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | COMPLEX | |
JESD-30 Code | R-XUFM-X20 | |
Number of Elements | 4 | |
Number of Terminals | 20 | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 203 ns | |
Turn-on Time-Nom (ton) | 32 ns |