Datasheets
F4100R12KS4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, MODULE-26

Part Details for F4100R12KS4BOSA1 by Infineon Technologies AG

Overview of F4100R12KS4BOSA1 by Infineon Technologies AG

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Price & Stock for F4100R12KS4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8778
Newark Igbt Module, Four Pack, 1.2Kv, 130A, Continuous Collector Current:130A, Collector Emitter Saturation Voltage:3.2V, Power Dissipation:660W, Operating Temperature Max:125°C, Igbt Termination:Press Fit, Transistor Mounting:Panel Rohs Compliant: Yes |Infineon F4100R12KS4BOSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 2
  • 1 $195.4700
  • 5 $189.2700
  • 10 $183.0800
$183.0800 / $195.4700 Buy Now
DISTI # F4100R12KS4BOSA1-ND
DigiKey IGBT MOD 1200V 130A 660W Min Qty: 1 Lead time: 15 Weeks Container: Tray 10
In Stock
  • 1 $163.8100
$163.8100 Buy Now
DISTI # 2156-F4100R12KS4BOSA1-448-ND
DigiKey IGBT MOD 1200V 130A 660W Min Qty: 1 Lead time: 15 Weeks Container: Bulk MARKETPLACE PRODUCT 5
In Stock
  • 2 $189.2900
$189.2900 Buy Now
DISTI # 13AC8778
Avnet Americas LOW POWER ECONO - Bulk (Alt: 13AC8778) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 56 Weeks, 4 Days Container: Bulk 2 Partner Stock
  • 1 $195.4700
  • 5 $189.2700
  • 10 $183.0800
$183.0800 / $195.4700 Buy Now
DISTI # F4100R12KS4BOSA1
Avnet Americas LOW POWER ECONO - Trays (Alt: F4100R12KS4BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 15 Weeks, 0 Days Container: Tray 0
RFQ
Future Electronics IGBT MOD 1200V 130A 660W RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 15 Weeks Container: Tray 0
Tray
  • 10 $163.1500
  • 20 $160.6000
$160.6000 / $163.1500 Buy Now
Rochester Electronics F4-100R12KS4 - 1200 V, 100 A, IGBT module RoHS: Compliant Status: Active Min Qty: 1 5
RFQ
DISTI # SP000100434
EBV Elektronik LOW POWER ECONO (Alt: SP000100434) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for F4100R12KS4BOSA1

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F4100R12KS4BOSA1 Part Data Attributes

F4100R12KS4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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F4100R12KS4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, MODULE-26
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X26
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 56 Weeks, 4 Days
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 130 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X26
Number of Elements 4
Number of Terminals 26
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 390 ns
Turn-on Time-Nom (ton) 190 ns

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