Datasheets
F3L75R12W1H3B27BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-21

Part Details for F3L75R12W1H3B27BOMA1 by Infineon Technologies AG

Overview of F3L75R12W1H3B27BOMA1 by Infineon Technologies AG

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Price & Stock for F3L75R12W1H3B27BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 51AH7931
Newark Igbt Mod, 4 N-Ch, 1.2Kv, 45A, 275W Rohs Compliant: Yes |Infineon F3L75R12W1H3B27BOMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $69.8600
  • 5 $68.0500
  • 10 $66.2400
  • 48 $64.4300
$64.4300 / $69.8600 Buy Now
DISTI # 448-F3L75R12W1H3B27BOMA1-ND
DigiKey IGBT MOD 1200V 45A 275W Min Qty: 1 Lead time: 14 Weeks Container: Tray 15
In Stock
  • 1 $56.2300
  • 24 $41.1875
$41.1875 / $56.2300 Buy Now
DISTI # 81733710
Verical Trans IGBT Module N-CH 1200V 45A 275W 22-Pin EASY1B-2 Tray Min Qty: 1 Package Multiple: 1 Americas - 24
  • 1 $55.5000
$55.5000 Buy Now
DISTI # C1S322000611151
Chip1Stop Trans IGBT Module N-CH 1200V 45A 275000mW 22-Pin EASY1B-2 Tray RoHS: Compliant Container: Tray 24
  • 1 $47.7000
$47.7000 Buy Now
DISTI # SP001056132
EBV Elektronik IGBT Module (Alt: SP001056132) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for F3L75R12W1H3B27BOMA1

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F3L75R12W1H3B27BOMA1 Part Data Attributes

F3L75R12W1H3B27BOMA1 Infineon Technologies AG
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F3L75R12W1H3B27BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X21
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 45 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X21
Number of Elements 4
Number of Terminals 21
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application GENERAL PURPOSE
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 385 ns
Turn-on Time-Nom (ton) 42 ns

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