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Transistors IGBTs F3L100R07W2E3B11BOMA1

F3L100R07W2E3B11BOMA1
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 117A I(C), 650V V(BR)CES, N-Channel, MODULE-34

Overview of F3L100R07W2E3B11BOMA1 by Infineon Technologies AG

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  • Distributor Offerings: ( 9 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Space Technology Aerospace and Defense

Price & Stock for F3L100R07W2E3B11BOMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 12AC9645
Newark Igbt, Module, N-Ch, 650V, 100A, Transistor Polarity:N Channel, Dc Collector Current:100A, Collector Emitter Saturation Voltage Vce(On):1.45V, Power Dissipation Pd:300W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Rohs Compliant: Yes |Infineon F3L100R07W2E3B11BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $57.2300
  • 5 $55.7100
  • 10 $54.2000
  • 25 $53.4400
  • 50 $52.6800
  • 100 $49.6500
$49.6500 / $57.2300 Buy Now
DISTI # F3L100R07W2E3B11BOMA1-ND
DigiKey IGBT MOD 650V 117A 300W Min Qty: 15 Lead time: 26 Weeks Container: Tray Temporarily Out of Stock
  • 15 $66.2540
  • 30 $63.9693
  • 105 $59.4001
$59.4001 / $66.2540 Buy Now
DISTI # V99:2348_18206151
Arrow Electronics Trans IGBT Module N-CH 650V 117A 300W 14-Pin EASY2B-2 Tray Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2252 Americas - 12
  • 1 $58.0400
$58.0400 Buy Now
DISTI # 45122645
Verical Trans IGBT Module N-CH 650V 117A 300W 14-Pin EASY2B-2 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2018 Americas - 17
  • 1 $64.0000
  • 5 $55.1250
$55.1250 / $64.0000 Buy Now
DISTI # 67040651
Verical Trans IGBT Module N-CH 650V 117A 300W 14-Pin EASY2B-2 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2252 Americas - 12
  • 1 $58.0400
$58.0400 Buy Now
Rochester Electronics F3LXR07W2J - LOW POWER EASY RoHS: Compliant Status: Active Min Qty: 1 15
  • 1 $61.5900
  • 25 $60.3500
  • 100 $57.8900
  • 500 $55.4300
  • 1,000 $52.3500
$52.3500 / $61.5900 Buy Now
Ameya Holding Limited   Min Qty: 15 15
  • 15 $67.6028
  • 105 $65.5748
$65.5748 / $67.6028 Buy Now
DISTI # C1S322000366376
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 17
  • 1 $44.1000
$44.1000 Buy Now
DISTI # SP000638564
EBV Elektronik Transistor IGBT Module N-CH 650V 117A �20V Screw Tray (Alt: SP000638564) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for F3L100R07W2E3B11BOMA1 by Infineon Technologies AG
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Part Data Attributes for F3L100R07W2E3B11BOMA1 by Infineon Technologies AG
Parametric Data

F3L100R07W2E3B11BOMA1
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
MODULE-34
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
26 Weeks
Samacsys Manufacturer
Infineon
Case Connection
ISOLATED
Collector Current-Max (IC)
117 A
Collector-Emitter Voltage-Max
650 V
Configuration
COMPLEX
JESD-30 Code
R-XUFM-X14
Number of Elements
4
Number of Terminals
14
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
345 ns
Turn-on Time-Nom (ton)
95 ns
Want to compare parts?
  1. F3L100R07W2E3B11BOMA1
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 117A I(C), 650V V(BR)CES, N-Channel, MODULE-34
    VS

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