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Transistors / Power Field-Effect Transistors / F1280
Datasheets
F1280 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for F1280 by Polyfet RF Devices

Overview of F1280 by Polyfet RF Devices

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Applications Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy Automotive

Part Details for F1280

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F1280 Part Data Attributes

Parametric Data
F1280 Polyfet RF Devices
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F1280 Polyfet RF Devices Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer POLYFET R F DEVICES
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 195 W
Surface Mount NO

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