Datasheets
F1235R12KT4GBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-38

Part Details for F1235R12KT4GBOSA1 by Infineon Technologies AG

Overview of F1235R12KT4GBOSA1 by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for F1235R12KT4GBOSA1

Part # Distributor Description Stock Price Buy
Bristol Electronics   7
RFQ

Part Details for F1235R12KT4GBOSA1

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F1235R12KT4GBOSA1 Part Data Attributes:

F1235R12KT4GBOSA1 Infineon Technologies AG
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F1235R12KT4GBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-38
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-38
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X38
Number of Elements 12
Number of Terminals 38
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 620 ns
Turn-on Time-Nom (ton) 210 ns

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