Datasheets
F12-35R12KT4G by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-38

Part Details for F12-35R12KT4G by Infineon Technologies AG

Overview of F12-35R12KT4G by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

Part Details for F12-35R12KT4G

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F12-35R12KT4G Part Data Attributes:

F12-35R12KT4G Infineon Technologies AG
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F12-35R12KT4G Infineon Technologies AG Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-38
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X38
Pin Count 38
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X38
Moisture Sensitivity Level 1
Number of Elements 12
Number of Terminals 38
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 210 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 620 ns
Turn-on Time-Nom (ton) 210 ns
VCEsat-Max 2.15 V

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