Part Details for ESM3045DV by STMicroelectronics
Results Overview of ESM3045DV by STMicroelectronics
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
ESM3045DV Information
ESM3045DV by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for ESM3045DV
ESM3045DV CAD Models
ESM3045DV Part Data Attributes
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ESM3045DV
STMicroelectronics
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Datasheet
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Compare Parts:
ESM3045DV
STMicroelectronics
24A, 450V, NPN, Si, POWER TRANSISTOR, ISOTOP-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | ISOTOP-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 24 A | |
| Collector-Emitter Voltage-Max | 450 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2 V |
ESM3045DV Frequently Asked Questions (FAQ)
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A good PCB layout for the ESM3045DV involves keeping the input and output traces short and symmetrical, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
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The ESM3045DV requires a stable power supply with minimal noise and ripple. Use a high-quality voltage regulator and decouple the power pins with 10uF and 100nF capacitors. Place the decoupling capacitors as close to the device as possible.
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The ESM3045DV can operate up to 1.5 GHz, but the maximum operating frequency depends on the specific application and the quality of the PCB layout. In general, it's recommended to operate the device at frequencies below 1 GHz for optimal performance.
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To optimize the ESM3045DV for low power consumption, use a low-power mode, reduce the operating frequency, and minimize the input signal amplitude. Additionally, use a low-dropout voltage regulator and optimize the PCB layout to reduce power losses.
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The recommended input signal amplitude for the ESM3045DV is between 100 mVpp and 1 Vpp. Signals with amplitudes outside this range may not be properly amplified or may cause distortion.