Part Details for EPC8002 by Efficient Power Conversion
Overview of EPC8002 by Efficient Power Conversion
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Internet of Things (IoT)
Financial Technology (Fintech)
Transportation and Logistics
Energy and Power Systems
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Telecommunications
Automotive
Consumer Electronics
Security and Surveillance
Aerospace and Defense
Healthcare
Communication and Networking
Robotics and Drones
Price & Stock for EPC8002
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
917-1118-1-ND
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DigiKey | GANFET N-CH 65V 2A DIE Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
52589 In Stock |
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$1.5375 / $2.3100 | Buy Now |
Part Details for EPC8002
EPC8002 CAD Models
EPC8002 Part Data Attributes
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EPC8002
Efficient Power Conversion
Buy Now
Datasheet
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Compare Parts:
EPC8002
Efficient Power Conversion
Power Field-Effect Transistor, 65V, 0.53ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | UNCASED CHIP, R-XXUC-X6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain-source On Resistance-Max | 0.53 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XXUC-X6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 2 A | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |