Part Details for EPC2016 by Efficient Power Conversion
Overview of EPC2016 by Efficient Power Conversion
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Industrial Automation
Price & Stock for EPC2016
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
917-1027-2-ND
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DigiKey | GANFET N-CH 100V 11A DIE Lead time: 16 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Part Details for EPC2016
EPC2016 CAD Models
EPC2016 Part Data Attributes
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EPC2016
Efficient Power Conversion
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Datasheet
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Compare Parts:
EPC2016
Efficient Power Conversion
Power Field-Effect Transistor, 11A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | UNCASED CHIP, R-XXUC-X6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XXUC-X6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | YES | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |
Alternate Parts for EPC2016
This table gives cross-reference parts and alternative options found for EPC2016. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EPC2016, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CSD19534Q5AT | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150 | Texas Instruments | EPC2016 vs CSD19534Q5AT |
| CSD19534Q5A | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150 | Texas Instruments | EPC2016 vs CSD19534Q5A |
| BSC159N10LSFGATMA1 | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0159ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | EPC2016 vs BSC159N10LSFGATMA1 |