Part Details for EPC1007 by Efficient Power Conversion
Overview of EPC1007 by Efficient Power Conversion
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for EPC1007
EPC1007 CAD Models
EPC1007 Part Data Attributes:
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EPC1007
Efficient Power Conversion
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Datasheet
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EPC1007
Efficient Power Conversion
Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-5
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
Package Description | UNCASED CHIP, R-XUUC-X5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUUC-X5 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 125 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | GALLIUM NITRIDE |