Datasheets
EPC1005 by:

Power Field-Effect Transistor, 25A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11

Part Details for EPC1005 by Efficient Power Conversion

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for EPC1005

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EPC1005 Part Data Attributes:

EPC1005 Efficient Power Conversion
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EPC1005 Efficient Power Conversion Power Field-Effect Transistor, 25A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer EFFICIENT POWER CONVERSION CORP
Package Description UNCASED CHIP, R-XUUC-X11
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUUC-X11
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 11
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material GALLIUM NITRIDE

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